Research Themes +
Energy Technologies Area (ETA) researchers are continually building on the strong scientific foundation we have developed over the past 50 years. We address the world’s most pressing climate challenges by bringing to market energy-efficient innovations across the buildings, transportation, and industrial sectors. ETA is at the forefront of developing better batteries for electric vehicles; improving the country's aging electrical grid and innovating distributed energy and storage solutions; developing grid-interactive, efficient buildings; and providing the most comprehensive market and data analysis worldwide for renewable technologies like wind and solar.
Strategic Initiatives +
The Energy Technologies Area (ETA) Strategic Plan is the guiding force for our research and development for the next ten years. It clearly charts a path toward clean-energy solutions and focuses on five detailed Strategic Initiatives. The Plan provides an in-depth look at how ETA is accelerating research to provide affordable, clean energy to all while accomplishing deep, economy-wide decarbonization, looking to avoid a rise in global average temperature while simultaneously developing solutions to increase humanity's resilience to extreme weather volatility.
Publications
News +
For media inquiries,
please contact ETA
Interim Communications Manager
Kiran Julin

kjulin@lbl.gov
About Us +
The Energy Technologies Area (ETA) is unique in translating fundamental scientific discoveries into scalable technology adoption. Our approach combines an understanding of the marketplace and the role of state and federal regulation and policies. ETA's research drives real-world, practical results that affect and improve the everyday lives of Americans and those across the globe. Saving energy and battling the Climate Crisis are key to the foundation of our research, which is driven by technoeconomic analysis and in-lab experimentation and discovery.

Publications

Publications by Research Area

Demand Response

Electricity Markets & Policy

Energy Efficiency

Industrial Energy Analysis

Renewable Energy

Sustainable Energy & Environmental Systems

Publications by Division

Building Technology (BTUS)

Energy Analysis (EAEI)

Energy Storage (ESDR)

2002

Auciello, O., A.M. Dhote, Ramamoorthy Ramesh, B.T. Liu, S. Aggarwal, A.H. Mueller, N.A. Suvarova, and E.A. Irene."Development of materials integration strategies for electroceramic film-based devices via complementary in situ and ex situ studies of film growth and interface processes."Integrated Ferroelectrics 46 (2002) 295-306. DOI

Liu, B.T., K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, and O. Auciello."Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer."Applied Physics Letters 80 (2002) 3599-3601. DOI

2001

Krauss, A.R., O. Auciello, A.M. Dhote, J. Im, S. Aggarwal, Ramamoorthy Ramesh, E.A. Irene, Y. Gao, and A.H. Mueller."Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties."Integrated Ferroelectrics 32 (2001) 121-131.

Dhote, A.M., O. Auciello, D.M. Gruen, and Ramamoorthy Ramesh."Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques."Applied Physics Letters 79 (2001) 800-802. DOI

2000

Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia 48 (2000) 3387-3394. DOI

1999

Aggarwal, S., A.M. Dhote, H. Li, S. Ankem, and Ramamoorthy Ramesh."Conducting barriers for vertical integration of ferroelectric capacitors on Si."Applied Physics Letters 74 (1999) 230-232. DOI

Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, S.B. Samavedam, S. Choopun, and R.P. Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.

Dhote, A.M., A.R. Krauss, O. Auciello, J. Im, D.M. Gruen, Ramamoorthy Ramesh, S.P. Pai, and T. Venkatesan."Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions."Materials Research Society Symposium - Proceedings 541 (1999) 281-286.

1998

Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics 19 (1998) 159-177. DOI

Im, J., A.R. Krauss, A.M. Dhote, D.M. Gruen, O. Auciello, Ramamoorthy Ramesh, and R.P.H. Chang."Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions."Applied Physics Letters 72 (1998) 2529-2531. DOI

1997

Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics 81 (1997) 3543-3547. DOI

Yang, B., S. Aggarwal, A.M. Dhote, T.K. Song, Ramamoorthy Ramesh, and J.S. Lee."La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier."Applied Physics Letters 71 (1997) 356-358. DOI

Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI

1996

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI

Aggarwal, S., A.M. Dhote, Ramamoorthy Ramesh, W.L. Warren, G.E. Pike, D. Dimos, M.V. Raymond, B.A. Tuttle, and J.T. Jr.."Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes."Applied Physics Letters 69 (1996) 2540-2542. DOI

Wei, W., A.M. Dhote, Ramamoorthy Ramesh, and S. Sauvage."Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon."Integrated Ferroelectrics 12 (1996) 53-62. DOI

1995

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI